Pirouz Pirouz

Pirouz Pirouz
Born
Tehran, Iran
CitizenshipIranian-American
EducationImperial College London (B.Sc., M.Phil., Ph.D.)
OccupationMaterials scientist
Known forResearch in electron microscopy, dislocation theory, semiconductor defects, and epitaxial growth
Scientific career
FieldsMaterials science, electron microscopy, semiconductor materials

Pirouz Pirouz is an Iranian-American materials scientist.[1] He served as Professor of Materials Science and Engineering at Case Western Reserve University from 1990 until his retirement in 2015,[2] after previously serving as associate professor at the same institution. His research has focused on the mechanical and electronic properties of semiconductors and covalent ceramics, high-resolution electron microscopy, and interfaces in advanced materials systems.[3]

Early life and education

Pirouz received his B.Sc., M.Phil., and Ph.D. degrees between 1965 and 1973 from the Department of Metallurgy and Science of Materials at Imperial College London, then part of the University of London.[4] His doctoral research focused on pseudo-Kikuchi patterns in scanning electron microscopy and the dynamical theory of electron diffraction.[5]

His Ph.D. thesis examined the geometry and physics of pseudo-Kikuchi patterns,[5] now commonly known as electron backscatter diffraction patterns.[6]

Career

Early research career

Following completion of his doctorate, Pirouz worked from 1973 to 1974 as a postdoctoral research fellow at the Laboratoire de Thermodynamique et Physico-Chimie Métallurgique, École Nationale Supérieure d'Électrochimie et d'Électrométallurgie,[1] Institut National Polytechnique de Grenoble in France. During this period, he conducted research on weak-beam electron imaging techniques and further developed expertise in transmission electron microscopy.[7]

In 1974, he returned to Iran and joined the University of Tehran as an assistant professor in the Department of Metallurgy, Faculty of Engineering. While teaching metallurgy and materials science courses, he continued to publish work on scanning electron microscopy and diffraction analysis.[8]

Stanford University and Oxford

In 1978, Pirouz joined Stanford University as a visiting scholar in the Department of Materials Science and Engineering. At Stanford, he conducted research in high-resolution transmission electron microscopy (HRTEM),[9] particularly studying imaging conditions under which HRTEM images correspond closely to atomic arrangements in crystalline materials.[10]

Following the Iranian Revolution in 1979, he remained outside Iran and moved to the University of Oxford in 1980 after being offered a position in his group by Sir Peter Hirsch.[11]

Case Western Reserve University

Pirouz joined Case Western Reserve University in 1985 as an associate professor in the Department of Materials Science and Engineering. He was promoted to professor in 1990 and remained at the university until his retirement as an emeritus professor in 2015.[1]

Research

Pirouz's research interests have included the plasticity and fracture of semiconductors,[12] dislocation theory, contrast theory in electron microscopy, heteroepitaxial growth of wide-bandgap semiconductors, and defects in crystalline materials.[13]

He has contributed to the understanding of electron diffraction phenomena,[14] semiconductor deformation mechanisms, and imaging methods in high-resolution electron microscopy.[15]

Selected publications

  • Junesand, Carl; Gau, Ming-Horn; Sun, Yan-Ting; Lourdudoss, Sebastian; Lo, Ikai; Jimenez, Juan; Postigo, Pablo Aitor; Morales, Fransisco M.; Hernandez, Jesus; Molina, Sergio; Abdessamad, Aouni; Pozina, Galia; Hultman, Lars; Pirouz, Pirouz (February 2014). "Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth". Materials Express. 4 (1): 41–53. doi:10.1166/mex.2014.1140.
  • Cowen, J.; Lucas, L.; Ernst, F.; Pirouz, P.; Hepp, A.; Bailey, S. (February 2005). "Liquid-phase deposition of single-phase alpha-copper-indium-diselenide". Materials Science and Engineering: B. 116 (3): 311–319. doi:10.1016/j.mseb.2004.05.057.
  • Pirouz, P.; Ernst, F.; Ikuhara, Yuichi (January 1998). "On Epitaxy and Orientation Relationships in Bicrystals". Solid State Phenomena. 59–60: 51–62. doi:10.4028/www.scientific.net/SSP.59-60.51.
  • Ernst, F.; Pirouz, P.; Bauser, E. (16 June 1992). "Lattice mismatch accommodation atGeSi/{111}Si interfaces grown by liquid phase epitaxy". Physica Status Solidi (A). 131 (2): 651–662. doi:10.1002/pssa.2211310235.
  • Ernst, F.; Pirouz, P.; Heuer, A. H. (February 1991). "HRTEM study of a Cu/Al 2 O 3 interface". Philosophical Magazine A. 63 (2): 259–277. Bibcode:1991PMagA..63..259E. doi:10.1080/01418619108204849.
  • Pirouz, P., Yang, J., Powell, J., & Ernst, F. (1991). The Role of Dislocations in the 3C6H SiC Polytypic Transformation. Inst. Phys. Conf. Ser. No., 117(3), 149–154.[1]
  • Ernst, F.; Pirouz, P.; Heuer, A. H. (January 1988). "High Resolution Electron Microscopy of an Alumina/Copper Interface". MRS Proceedings. 138 557. doi:10.1557/PROC-138-557.
  • Ernst, F.; Pirouz, P. (August 1989). "The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates". Journal of Materials Research. 4 (4): 834–842. doi:10.1557/JMR.1989.0834.
  • Pirouz, P.; Ernst, F.; Cheng, T. T. (1988). "Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation". MRS Proceedings. 116 57. doi:10.1557/PROC-116-57.
  • Pirouz, P.; Yang, J.; Ernst, F.; Möller, H.-J. (January 1989). "Hexagotnal Silicon: A New Hrem Study". MRS Proceedings. 139 199. doi:10.1557/PROC-139-199.
  • Ernst, F.; Pirouz, P. (November 1988). "Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical-vapor deposition". Journal of Applied Physics. 64 (9): 4526–4530. Bibcode:1988JAP....64.4526E. doi:10.1063/1.341280.
  • Cheng, T. T.; Pirouz, P.; Ernst, F. (1988). "Inversion Domain Boundary Dislocations in Heteroepitaxial Films". MRS Proceedings. 144 189. doi:10.1557/PROC-144-189.

References

  1. 1 2 3 4 "Pirouz Pirouz | Case School of Engineering | School of Engineering | Case Western Reserve University". case.edu. 2024-07-18. Retrieved 2026-07-06.
  2. ↑ Abrahams, Marc (29 August 2006). "First shall be last". The Guardian.
  3. ↑ Abrahams, Marc (2006-02-10). "The Professor-Professors & Mono-Professors". Improbable Research. Retrieved 2026-07-06.
  4. ↑ "Pirouz Pirouz". Case School of Engineering. Retrieved 2026-07-06.
  5. 1 2 Pirouz, P.; Boswarva, I. M. (16 December 1974). "Computer generation of pseudo-Kikuchi patterns for triclinic crystals". Physica Status Solidi (A). 26 (2): 407–415. Bibcode:1974PSSAR..26..407P. doi:10.1002/pssa.2210260202.
  6. ↑ Baba-Kishi, K. Z. (May 2002). "Review Electron backscatter Kikuchi diffraction in the scanning electron microscope for crystallographic analysis". Journal of Materials Science. 37 (9): 1715–1746. doi:10.1023/A:1014964916670.
  7. ↑ Latu-Romain, Laurence; Chaussende, Didier; Pons, Michel (December 2006). "High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces". Crystal Growth & Design. 6 (12): 2788–2794. Bibcode:2006CrGrD...6.2788L. doi:10.1021/cg060420l.
  8. ↑ Ikuhara, Y.; Pirouz, P. (1998-02-01). "High resolution transmission electron microscopy studies of metal/ceramics interfaces". Microscopy Research and Technique. 40 (3): 206–241. doi:10.1002/(SICI)1097-0029(19980201)40:3<206::AID-JEMT4>3.0.CO;2-S. ISSN 1059-910X. PMID 9518055.
  9. ↑ Pirouz, P. (January 1980). "The many-beam theory of lattice image formation in transmission electron microscopy". Philosophical Magazine A. 41 (1): 33–40. Bibcode:1980PMagA..41...33P. doi:10.1080/01418618008241829.
  10. ↑ Ikuhara, Yuichi; Pirouz, Pirouz (February 1998). "High resolution transmission electron microscopy studies of metal/ceramics interfaces". Microscopy Research and Technique. 40 (3): 206–241. doi:10.1002/(SICI)1097-0029(19980201)40:3<206::AID-JEMT4>3.0.CO;2-S. PMID 9518055.
  11. ↑ Wang, Shanling; Pirouz, Pirouz (September 2007). "Mechanical properties of undoped GaAs. II: The brittle-to-ductile transition temperature". Acta Materialia. 55 (16): 5515–5525. Bibcode:2007AcMat..55.5515W. doi:10.1016/j.actamat.2007.06.026.
  12. ↑ Pirouz, Pirouz; Wang, Shanling; Zhang, Ming; Demenet, Jean-Luc (2004). "On the Plasticity and Fracture of Semiconductors". IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength. Solid Mechanics and its Applications. Vol. 115. pp. 139–152. doi:10.1007/978-1-4020-2111-4_14. ISBN 978-90-481-6576-6.
  13. ↑ Maximenko, Serguei I.; Pirouz, Pirouz; Sudarshan, Tangali S. (18 July 2005). "Investigation of the electrical activity of partial dislocations in SiC p-i-n diodes". Applied Physics Letters. 87 (3) 033503. Bibcode:2005ApPhL..87c3503M. doi:10.1063/1.1999297.
  14. ↑ Teker, Kasif; Lee, Ki Hoon; Jacob, Chacko; Nishino, Shigehiro; Pirouz, Pirouz (2000). "Epitaxial Growth of SiC on AlN/ Sapphire Using Hexamethyldisilane by MOVPE". MRS Proceedings. 640 H5.10. doi:10.1557/PROC-640-H5.10.
  15. ↑ Pirouz, P. (1989-03-01). "On twinning and polymorphic transformations in compound semiconductors". Scripta Metallurgica. 23 (3): 401–406. doi:10.1016/0036-9748(89)90390-6. ISSN 0036-9748.
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